Muslimin (2005) Efek Kadar Oksigen, Laju Deposisi dan Annealing Terhadap Sifat Listrik, Optik dan Struktur Mikro pada Pembuatan Lapisan Tipis Indium Tin Oksida. Disertasi thesis, UNIVERSITAS AIRLANGGA.

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Abstract

This film ofindiwn tin oxide (ITO) with 90 % ofIn203 and 10 % ofSn02 has been manufactured with thickness 611,4 run and 606,9 run by means of dc sputtering in vacuum by pressure of 10.5 mBar on the glass substrate. The study was conducted to find out the effect of oxygen content change, deposition rate while coating and annealing after coating in vacuum room toward the changes of electrical, optical and microstructure properties in thin film of indium tin oxide. The measurement of electrical properties was performed by using four point probe and Hall etIect, optical properties using UV -Vis spectrophotometry and microstructure using X-ray diffraction. The result of the analysis showed that oxygen content, deposition rate and annealing could cause microstructure changes of ITO thin film. This changes could result in the changes of electrical and optical properties of ITO thin film. The lowest electrical resistivity was 3,06 x 10-4 n cm on thin film thickness of 611,4 run with the oxygen content of3,70 %, deposition rate 4,21 nmls and annealing temperature 250°C with transmittance 84,71 %. Whereas the highest transmittance was 87,12 % on the oxygen content of 3,70 %, deposition rate of 4,21 nmls and annealing temperature 250°C with electrical resistivity 6,72 x 10-4 n cm. The optimum oxygen content which resulted the best electrical resistivity was achieved on the oxygen content of 3,70 % and the optimum transmittance was on oxygen content of 8,90 % with deposition rate 4,21 nmls and annealing temperature 250°C.

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